| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where performance of a semiconductor element can sufficiently be derived. SOLUTION: A sensor diode 302 is arranged in an almost center of a region which is press-fitted by a press fitting heat spreader 304 so that a periphery is surrounded by an IGBT cell 1001. A groove 305 is disposed on the lower face side of the press-fitting heat spreader 304 which is brought into contact with an emitter electrode 1007 of IGBT 101, so that the press-fitting heat spreader 304 does not depress the sensor diode 302 and a temperature sensor harness 303. Thus, responsiveness of a temperature detected by the sensor diode 302 can be improved with respect to a temperature change of IGBT 101 by heat generation of an active region 301. Thus, unnecessary margin is not required as in a conventional semiconductor device at the time of protecting a temperature rise of IGBT 101 based on the temperature detected by the sensor diode 302, and performance of IGBT 101 can sufficiently be derived. COPYRIGHT: (C)2007,JPO&INPIT
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