| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems wherein a metal oxide film is damaged and device characteristics are poorly affected when using physical sputter for etching the metal oxide film. SOLUTION: Reactive gas is activated by plasma, and the activated reactive gas is allowed to hit against a metal oxide film 44, thus etching the metal oxide film 44 and hence dispensing with the irradiation of high-energy ions as before for obtaining the same etch rate. Additionally, the metal oxide film 44 is heated at 100°C or higher for etching. Further, the etch rate is adjusted to 50 nm/min or smaller. COPYRIGHT: (C)2007,JPO&INPIT
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