INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF

摘要

An IC device and a manufacturing method thereof are provided to acquire a thinner device structure than a conventional device structure by thinning or removing a substrate. A first layer is formed on one surface of a substrate(100). The hardness of the first layer is higher than that of the substrate. A predetermined element(105) is formed on the first layer. A grinding process or a polishing process is performed on the other surface of the substrate, so that the substrate is remarkably thinned or removed from the resultant structure. The predetermined element includes a TFT.