| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a more stable optical current value by reducing variation in optical current characteristics, relating to a thin film diode of a gate control type that has a pin structure. <P>SOLUTION: In a second light receiving region 7 of a p-region 2 which is a semiconductor layer in which the impurity of low concentration is injected, the width of a gate electrode 5 corresponding to a first light receiving region 6 is so adjusted that a length L2 form one end connected to an n<SP>+</SP>region 4 to the other end on the first light receiving region 6 side is 12-15 μm. So, compared to the case in which the length is out of that range, variation in the optical current value is reduced with the minimum value in variation becoming larger. <P>COPYRIGHT: (C)2007,JPO&INPIT |
