| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser element capable of prolonging the lifetime of elements. SOLUTION: The nitride-based semiconductor laser element includes an n-type clad layer 3, an emission layer 5 formed on the n-type clad layer 3, and a p-type clad layer 7 formed on the emission layer 5. Furthermore, the emission layer 5 includes an MQW active layer for emitting light, an n-type guide layer 54 and a p-type guide layer 56 for confining light, and an n-type carrier block layer 53 and a p-type carrier block layer 55, interposed respectively in between an active layer and the n-type guide layer 54, and the p-type guide layer 56, and having a band gap, larger than that of the n-type guide layer 54 or that of the p-type guide layer 56, respectively. COPYRIGHT: (C)2007,JPO&INPIT
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