| 摘要 |
PROBLEM TO BE SOLVED: To provide a film transistor which can reduce defects involved in the patterning of a silicon nitride film, and to provide its manufacturing method. SOLUTION: After the silicon nitride film 5 is formed over the whole surface, a silicon oxide film 6 is formed on it. Next, a water-cleaning treatment is carried out. Next, the patterning of the silicon oxide film 6 and of the silicon nitride film 5 is performed. At this time, the shape of the silicon nitride film 5 is of reverse-tapered shape, because the silicon oxide film 6 exists on it. Next, a semiconductor film 4 is patterned, and a source electrode 7 and a drain electrode 8 are formed on the semiconductor film 4. Thus, a film transistor 10 is formed. At this time, dust 11, such as the remainder and deposit of metal film etc. may be accumulated between the source electrode 7 and drain electrode 8. Even such a case, the dust 11 is clearly cut off from the source electrode 7 and drain electrode 8, because the silicon nitride film 5 is of reverse-tapered shape. COPYRIGHT: (C)2007,JPO&INPIT
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