| 摘要 |
PROBLEM TO BE SOLVED: To realize a method for manufacturing an inexpensive high quality single crystal insulating iron oxide film which has a flat and smooth surface and is free from the deterioration in the characteristics caused by N<SB>2</SB>or the like, and with which high efficiency spin injection is possible even in a coherent tunnel mechanism of a spin filter-type tunnel magnetoresistance element. SOLUTION: The single crystal insulating iron oxide film is formed on the surface of a substrate 1 (heated to a temperature of≤250°C) by vapor depositing metal iron containing an iron component in a content of 99.95% on the surface of the substrate 1 placed in a vacuum container 3 (3×10<SP>-6</SP>Torr) and at the same time, supplying an ozone gas containing an ozone component being an oxidation source in a content of≥90% onto the surface of the substrate 1 to oxidize the vapor-deposited iron. COPYRIGHT: (C)2007,JPO&INPIT
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