| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor wafer which has such a structure that a slip line does not occur in an area used for forming a device in both surfaces thereof even when a sudden temperature change is applied to the wafer. SOLUTION: The compound semiconductor wafer is obtained by cutting a compound semiconductor crystal. The area from the outer peripheral edge 3 of the wafer to a distance D toward the center of the wafer is a high dislocation density area 2 having a high dislocation density of≥100,000 cm<SP>-2</SP>, in both wafer surfaces. COPYRIGHT: (C)2007,JPO&INPIT
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