| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor layer structure capable of growing an epitaxial layer of a semiconductor, particularly a nitride compound semiconductor at a high quality level, and to provide an economical method for producing the semiconductor. SOLUTION: The method for producing the semiconductor layer structure comprises the steps of implanting carbon ions into a specified depth of a silicon wafer, heat-treating the silicon wafer, thereby forming a single-crystal silicon carbide layer embedded in the silicon wafer and forming amorphous transition regions above and below the silicon carbide layer, subsequently separating the upper silicon layer from the amorphous transition region above the single-crystal silicon carbide layer, thereby exposing the single-crystal silicon carbide layer, and subsequently chemically-mechanically flatening the exposed surface of the single-crystal silicon carbide layer so as to have a surface roughness of less than 0.5 nm (RMS). COPYRIGHT: (C)2007,JPO&INPIT
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