| 摘要 |
The invention relates to a method for the production of passivated defining surfaces ( 6 a, 6 b) between a first layer, such as a silicide ( 5 ), and an adjacent layer. Passivating elements, such as S, Se and Te are used in said layer structure during said method and the first layer is enriched on the adjacent layer during heat treatment on at least one defining surface. Schottky barriers can be reduced and output work of the transition can be adjusted. Components, e.g. Schottky barrier MOSFETs with small or negative Schottky barriers arc disclosed as source and/or drain contacts and spin transistors.
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