Light emitting diode and manufacturing method thereof

摘要

A technique of ensuring compatibility between the method of improving the light extraction efficiency by roughening the surface of a LED structure, and the method of avoiding the adverse effect of a low-cost electrode pad ((1) forming a current distribution layer by a transparent conductive film made of metal or metal oxide, and (2) forming a flip chip structure). A light emitting diode comprises at least an n-type semiconducting layer, an active layer composed of 30 or less quantum well layers, and a p-type semiconducting layer provided on a substrate, wherein the surface of the semiconductor lamination structure contains a flat portion and a plurality of bores. In this case, the in-plane coverage rate ((the area of the bore opening/surface area)x100) of the plurality of the bores is 10% or more without exceeding 85%; the opening of the bore has a diameter of 100 nm or more without exceeding 4000 nm; the depth of the bore is smaller than the distance between the active layer and the flat portion; and the density of the plurality of the bores expressed in terms of number of bores is 8x10⁵ per/cm² or more without exceeding 1.08x10¹⁰ per/cm².