REWRITEABLE MEMORY CELL COMPRISING A TRANSISTOR AND RESISTANCE-SWITCHING MATERIAL IN SERIES

摘要

A nonvolatile memory cell is provided, the cell comprising a transistor in series with resistance- switching material, which can be switched between at least two stable resistance states, for example a high-resistance state and a low-resistance state. In preferred embodiments the transistor is a TFT, having a channel region not formed in a monocrystalline wafer substrate. In preferred embodiments the transistor may have' either a vertically oriented ch'annel or a laterally oriented channel. Either embodiment can be formed in a monolithic three dimensional memory array in which multiple memory levels can be formed above a single substrate, forming a highly dense nonvolatile memory array.