| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for power for reducing power loss even if a local lifetime control region is formed. <P>SOLUTION: A diode comprises an n<SP>-</SP>-type base layer 1; the local lifetime control region 2 formed inside the n<SP>-</SP>-type base layer 1; an n<SP>+</SP>-type cathode layer 3 formed on the surface of the n<SP>-</SP>-type base layer 1; a cathode electrode 4 formed on the surface of the cathode layer 3; an n-type base layer 5 formed on the surface of the n<SP>-</SP>-type base layer 1 at a side opposite to the cathode layer 3; a p-type anode layer 6 formed on the surface of the n-type base layer 5; a p<SP>+</SP>-type junction termination layer 7 formed adjacent to the outside in the horizontal direction of the anode layer 6; and an anode electrode 8 formed on the surface of the anode layer 6. A local lifetime control region 2 is formed inside the low-concentration n<SP>-</SP>-type base layer 1, thus relaxing the inclination of field strength in the diode, suppressing the occurrence of an avalanche, and reducing power loss. <P>COPYRIGHT: (C)2007,JPO&INPIT |
