| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the product life of a semiconductor storage device provided with a plurality of nonvolatile memory chips. <P>SOLUTION: When a first storage area 12A and a second storage area 12B adjacent thereto are formed by the plurality of nonvolatile memory chips, the first storage area and the second storage area are partitioned by a buffer area 13 in which reading and writing of data is prohibited, and the boundary of the first storage area with the buffer area and the boundary of the second storage area with the buffer area are formed on different nonvolatile memory chips. The second storage area is not affected by breakage of the nonvolatile memory chips belonging to the first storage area, nor the first storage area by breakage of the nonvolatile memory chips belonging to the second storage area. According to this, even if a nonvolatile memory chip belonging to one storage are is broken, the other storage area is successively enabled. <P>COPYRIGHT: (C)2007,JPO&INPIT |
