| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser device with which the problem that electron overflows from an active layer to a cladding layer is solved, and the temperature characteristics is improved. SOLUTION: In order to manufacture the semiconductor laser device, with which the forbidden band width of a p side clad layer or the forbidden band width of both of clad layers is made at least 1.35 eV larger than the forbidden band width of an active layer, the p-side clad layer or both the p-side and the n-side clad layers, whose forbidden band widths are made larger than the forbidden band width of the active layer, adhere-on the active layer by a method of adhering the substrate. COPYRIGHT: (C)2007,JPO&INPIT
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