| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor excellent in transistor characteristics. SOLUTION: The thin-film transistor is provided with an insulating layer arranged on the surface of a base. It is arranged on the surface of an insulating layer. The transistor comprises: a semiconductor layer 1 containing a p-type channel 13, an n-type source 12, and an n-type drain 14; and a gate electrode 11 arranged via an insulating layer. The semiconductor layer 1 has a drawing-out part 21 formed so that it can reach from the source 12 to the drain 14 through the channel 13. The drawing-out part 21 is formed in p-type, and it is formed so that impurities concentration can get higher than the channel 13. The drawing-out part 21 is formed in a line. COPYRIGHT: (C)2007,JPO&INPIT
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