| 摘要 |
A semiconductor device has a rectifier circuit and integrated circuit on a semiconductor substrate of a first conduction type, and has a first well region in the substrate, a second well region in first well region, and a diode region formed in second well region and constituting a diode with second well region. The rectifier circuit is formed by the diodes. An input power supply terminal, changing between positive and negative potentials, is connected to second and first well regions of a first diode and to diode region of a second diode. A current supply terminal is provided in the vicinity of first well region of first diode, and is connected to the substrate and a prescribed power supply, so as to supply a current to the PN junction between the first well region and the semiconductor substrate when the input power supply terminal is at negative potential.
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