| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vertical structure semiconductor light emitting device, which has a high quality and in which the cause of a crack is suppressed; and manufacturing method thereof. <P>SOLUTION: This vertical structure semiconductor light emitting device according to the present invention comprises an Si-Al alloy substrate; and a p-type semiconductor layer comprising compounds of elements belonging to the III-V Groups, an activated layer and an n-type semiconductor layer comprising compounds of elements belonging to the III-V Groups, which are sequentially laminated on the Si-Al alloy substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT |
