MANUFACTURING METHOD FOR P-TYPE SURFACE CONDUCTIVE LAYER ON OXYGEN-TERMINATED (111) DIAMOND

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a p-type surface conductive layer on a (111) homoepitaxial diamond thin film. SOLUTION: The surface of a flat homoepitaxial diamond film of low surface level density grown on a diamond (111) single-crystal substrate by a vapor-phase growing method using carbon hydride is terminated with oxygen atoms by boiling and washing processing using mixed acid, processing using oxygen plasma, or atmospheric annealing to obtain p-type surface conductive oxygen-terminated (111) diamond. COPYRIGHT: (C)2007,JPO&INPIT