| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein regions of a second polarity opposite to a first polarity is formed on the well region of the first polarity according to a simple manufacturing process, and to provide a manufacturing method thereof relating to the semiconductor device wherein well regions of the second polarity opposite to the first polarity is arranged around the well region of the first polarity and a manufacturing method thereof. SOLUTION: This invention comprises a region provided on the well region of the first polarity and formed by superposing the well regions (131, 141) of the second polarity on the well region (121) of the first polarity in the semiconductor device, wherein the well regions (131, 141) of the second polarity are arranged around the well region (121) of the first polarity. COPYRIGHT: (C)2007,JPO&INPIT
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