发明名称 |
Active region of a light emitting device optimized for increased modulation speed operation |
摘要 |
In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.
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申请公布号 |
US2006274801(A1) |
申请公布日期 |
2006.12.07 |
申请号 |
US20050143374 |
申请日期 |
2005.06.01 |
申请人 |
TANDON ASHISH;DJORDJEV KOSTADIN;LIN CHAO-KUN;TAN MICHAEL R |
发明人 |
TANDON ASHISH;DJORDJEV KOSTADIN;LIN CHAO-KUN;TAN MICHAEL R. |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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