| 摘要 |
<p>Mass flow controller (14), through controlling of process control unit (17), at the time of cleaning of target (9) supplies a gas containing hydrogen atoms into film forming chamber (4) so that any nodule being a decomposition matter generated on the surface of the target (9) is removed by means of plasma from the gas containing hydrogen atoms. By virtue of this construction, any nodule generated on the surface of the target (9) in the apparatus can be removed easily with certainty to thereby realize a sputter film forming of high productivity.</p> |
