| 摘要 |
<p>There is provided a nonvolatile memory realizing nonvolatile characteristic similar to a flash memory and a high-speed access equivalent to SRAM, enabling integration exceeding DRAM, and requiring low voltage obtained by small-size battery drive and low power consumption. There are provided: [1] a nonvolatile memory having a nano-hole-containing metal oxide film having a honeycomb structure and a film thickness of 0.05 to 5 µm arranged in a shot key joint between a pair of metal electrodes so as to utilize the boundary level formed on the partition wall of the nano-hole-containing metal oxide film as a memory charge holder; and [2] a nonvolatile memory including a substrate electrode, nano-hole-containing metal oxide film formed by anode-oxidizing the surface of the substrate electrode, and a metal electrode shot key-joined on the upper end portion of the partition wall of the nano-hole-containing metal oxide film, wherein the nano-hole-containing metal oxide film has a structure of a plurality of dual shot key partition walls formed in parallel.</p> |
