| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the matter of an photodetector split into four that the process for forming an isolation structure is intricate. <P>SOLUTION: On a P-sub layer 80 becoming the common anode of a PIN photodiode (PIN-PD) in each section, an epitaxial layer 82 of high specific resistance becoming the i-layer of the PIN-PD is grown. On the boundary of a section 62, an isolation region 64 of p<SP>+</SP>region is formed by ion implantation from the surface of a substrate. When the PIN-PD is made to function by reverse biasing a cathode region 66 formed in each region and the P-sub layer 80, the isolation region 64 is brought to ground potential together with the P-sub layer 80 and becomes the anode. Consequently, a potential barrier against electrons is formed on the epitaxial layer 82 between the isolation region 64 and the P-sub layer 80. Consequently, electrons generated by absorbing light in each region are prevented from migrating to an adjacent section thus achieving isolation. <P>COPYRIGHT: (C)2007,JPO&INPIT |
