发明名称 METHOD FOR FORMING MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for forming a mask, with which the number of detectable pseudo defects is reduced. <P>SOLUTION: A design data of the mask containing a plurality of pattern areas containing an identical repetition pattern is prepared (S1), a mask pattern data is generated based on the design data (S2), inspection control information to control inspection of defects on the mask based on the mask pattern data is generated (S3), the information to control inspection is imparted to the mask pattern data and a data for drawing/inspecting is formed (S4), the mask pattern is formed based on the data for drawing/inspecting (S5), the mask pattern is inspected based on the data for drawing/inspecting (S6), a portion corresponding to a repetition pattern in the plurality of pattern areas is selected from the mask patterns based on the inspection control information, the selected portion is inspected with a die-to-die comparison method, and a portion of the mask pattern different from the plurality of pattern areas is inspected with a die-to-database comparison method. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006330269(A) 申请公布日期 2006.12.07
申请号 JP20050152435 申请日期 2005.05.25
申请人 TOSHIBA CORP 发明人 IKENAGA OSAMU;TSUTSUI TOMOHIRO
分类号 G03F1/84 主分类号 G03F1/84
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