| 摘要 |
A semiconductor device with a capacitor comprises a lower electrode, a dielectric and an upper electrode on the dielectric layer. The dielectric layer comprising one or more polycrystalline tantalum oxide layers and one or more separation layers, wherein the polycrystalline tantalum oxide layers and the separation layers are alternately stacked, while one of the polycrystalline tantalum oxide layers is a lowermost layer among the stacked layers.
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