| 摘要 |
PROBLEM TO BE SOLVED: To improve a manufacturing yield of semiconductor device by enabling uniform polishing. SOLUTION: A polishing pad 51 has a laminating structure formed by a conductive sheet 61, an insulating layer 62, and a conductive surface 63. A plurality of concave portions 71 are formed which is capable of holding an electrolyte and penetrates the conductive surface 63 and insulating layer 62 and exposes the conductive sheet 61 at a bottom. A passage 72 capable of making an electrolyte 55 move between the concave portions 71 is formed in the insulating layer 62 between the concave portions 71. A polishing process of conductor layer 52a on a semiconductor wafer 52 comprises the processes of rotating a platen 53 and polishing head 54; filling each inside of the concave portion 71 with the electrolyte 55 by supplying the electrolyte 55 on the polishing pad 51; supplying positive potential to the conductive surface 63; making the conductive sheet 61 a cathode by supplying negative potential to the conductive surface 61; and the conductor layer 52a is processed in electrolyte polishing in such a way that the conductor layer 52a is made to be an anode, by contacting it with the conductive surface 63 of the polishing pad 51. Further, during the polishing process, the electrolyte 55 moves between the concave portions 71 through the passage 72. COPYRIGHT: (C)2007,JPO&INPIT
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