发明名称 |
Systems and methods for plasma etching |
摘要 |
Systems and methods are disclosed for processing a semiconductor substrate by depositing a conductive layer on the substrate; patterning a set of insulating structures on the substrate; selectively back-biasing the substrate; depositing a layer of material on the substrate; and removing a part of the conductive layer selectively biased to attract cation bombardment.
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申请公布号 |
US2006276036(A1) |
申请公布日期 |
2006.12.07 |
申请号 |
US20040966384 |
申请日期 |
2004.10.15 |
申请人 |
NAGASHIMA MAKOTO;SCHMIDT DOMINIK |
发明人 |
NAGASHIMA MAKOTO;SCHMIDT DOMINIK |
分类号 |
C23C14/32;H01L21/44 |
主分类号 |
C23C14/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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