发明名称 Insulating film and method for forming the same, and film-forming composition
摘要 A method of forming an insulating film includes: forming a polysiloxane insulating film on a substrate; forming a polycarbosilane insulating film on the polysiloxane insulating film; and forming a CVD insulating film on the polycarbosilane insulating film by plasma chemical vapor deposition (CVD). The polysiloxane insulating film is formed by hydrolysis and condensation of a silane compound, and the polycarbosilane insulating film is formed by applying a solution obtained by dissolving a polycarbosilane compound in a solvent, and heating the resulting coating.
申请公布号 US2006275614(A1) 申请公布日期 2006.12.07
申请号 US20060432345 申请日期 2006.05.12
申请人 JSR CORPORATION 发明人 SHIOTA ATSUSHI
分类号 B32B27/00;C08J7/18;C08L83/00;C09D183/16;H01L21/312;H01L21/316;H01L21/768 主分类号 B32B27/00
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