发明名称 |
Reference scheme for a non-volatile semiconductor memory device |
摘要 |
A non-volatile semiconductor memory device is provided comprising a memory area and a circuitry area. The memory area includes a plurality of memory cells and a set of array reference cells that are programmable to have a threshold voltage corresponding to an erased or a programmed state of a memory cell. In the circuitry area, additional main reference cells are provided, which are configured to also have a threshold voltage corresponding to an erased or programmed state of a memory cell. The main reference cells are used for setting of said array reference cells and said array reference cells are provided as a reference for reading or writing a state of said memory cells. A method is also provided for setting array reference cells in a non-volatile semiconductor memory device to a predefined threshold voltage.
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申请公布号 |
US2006274581(A1) |
申请公布日期 |
2006.12.07 |
申请号 |
US20050145520 |
申请日期 |
2005.06.03 |
申请人 |
REDAELLI MARCO;AMBROGGI LUCA DE |
发明人 |
REDAELLI MARCO;AMBROGGI LUCA DE |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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