| 摘要 |
<p>A semiconductor device wherein strength against a stress generated in a bonding pad is improved. A plurality of bonding pads (1) are provided. In each of the bonding pads (1), a plurality of linear second metals (12) are provided under a first metal (11) formed by using an uppermost layer. Then, to improve the strength against the stress generated in the bonding pad, the bonding pads (1) are arranged in the longitudinal direction of the second metals (12). Namely, the bonding pads (1) are arranged so as to have the longitudinal direction (L1) of the second metal (12) and the arrangement direction (L2) of the bonding pads (1) in the same direction.</p> |
