PHOTOSENSITIVE RESIN COMPOSITION AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING A COMMON ELECTRODE SUBSTRATE USING THE SAME

摘要

Provided are a photosensitive resin composition which prevents a generation of roughness on surface of pattern of organic membrane having acid structure, a method for manufacturing a thin film transistor substrate by using the same resin composition, and a method for manufacturing a common electrode substrate by using the same resin composition. The photosensitive resin composition comprises (A) 100 parts by weight of acrylic copolymer obtained by copolymerizing 5-60 wt% of isobornyl carboxylate compound, 10-40 wt% of unsaturated carboxylic acid, unsaturated carboxylic anhydride, or mixture thereof, 20-40 wt% of unsaturated compound containing epoxy group, and (B) 5-100 parts by weight of 1,2-quinonediazide compound. The method for manufacturing a transistor substrate comprises the steps of (i) forming a gate metal pattern comprising gate electrode on base substrate, (ii) forming a gate insulating membrane on the metal pattern, (iii) forming a channel layer on the insulating membrane corresponding to the gate electrode, (iv) forming a source metal pattern comprising source and drain electrodes on the insulating membrane having the channel layer, (v) forming an overcoating layer comprising a contact hole which covers the gate insulating membrane, the channel layer, and the source metal pattern, and exposes a part of the drain electrode, (vi) forming a pixel electrode layer which is electrically connected to the drain electrode through the contact hole and has a boundary as partition part of domain, (vii) applying the photosensitive resin composition on the pixel electrode layer, and (viii) exposing and developing the photosensitive resin composition and forming an inclined membrane of tapered structure.