发明名称 CHEMICAL VAPOR DEPOSITION APPARATUS FOR MULTIPLE SUBSTRATES
摘要 A chemical vapor deposition apparatus for a multiple substrate is provided to increase growing speed of a substrate by forming a depositing layer having uniform quality on the substrate. An air inlet(12) and an air outlet(14) are formed on a chamber(10). A heating unit(20) controls reactive temperature of a substrate(5) and the air flowed in through the air inlet. A substrate revolution unit(30) has a rotating plate that is rotatable in the chamber. Plural disk units(34) where the substrate is arranged are formed on the rotating plate. The substrate revolution unit rotates the substrate through rotation of the rotating plate. A substrate rotation unit(40) rotates the disk unit on the rotating plate by the rotation of the substrate revolution unit to give rotation to each substrate on the disk unit.
申请公布号 KR20060126265(A) 申请公布日期 2006.12.07
申请号 KR20050048023 申请日期 2005.06.03
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM, CHEOL KYU;LEE, SOO MIN;JANG, SUNG HWAN
分类号 H01L21/205 主分类号 H01L21/205
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