| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which electric short-circuit caused by migration does not occur easily. <P>SOLUTION: The semiconductor device comprises a semiconductor substrate 10, a plurality of conductive portions 20 formed on the semiconductor substrate 10 not to interconnect electrically, and a plurality of resin walls 30 formed to section a predetermined region. Each conductive portion 20 is formed such that at least a part thereof is arranged in a region sectioned by any one resin wall 30. Each resin wall 30 is shaped to extend along the outer circumference of any one conductive portion 20. <P>COPYRIGHT: (C)2007,JPO&INPIT |
