发明名称 |
Interconnects having sealing structures to enable selective metal capping layers |
摘要 |
Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.
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申请公布号 |
US2006273431(A1) |
申请公布日期 |
2006.12.07 |
申请号 |
US20050144576 |
申请日期 |
2005.06.03 |
申请人 |
HE JUN;FISCHER KEVIN J;ZHOU YING;MOON PETER K |
发明人 |
HE JUN;FISCHER KEVIN J.;ZHOU YING;MOON PETER K. |
分类号 |
H01L23/52;H01L21/469 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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