发明名称 Pixel of image sensor and method for fabricating the same
摘要 A pixel of an image sensor includes a polysilicon layer, and an active region which needs to be electrically coupled with the polysilicon layer, wherein the polysilicon layer extends over a portion of the active region, such that the polysilicon layer and the active region are partially overlapped, and the polysilicon layer and the active region are coupled through a buried contact structure.
申请公布号 US2006273354(A1) 申请公布日期 2006.12.07
申请号 US20060444394 申请日期 2006.06.01
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 CHOI WOON-IL;KIM HYUNG-SIK;KIM UI-SIK
分类号 H01L29/768;H01L27/146;H04N5/335;H04N5/369;H04N5/374 主分类号 H01L29/768
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