A METHOD FOR CLEANING A WAFER

摘要

A method for cleaning a wafer is provided to avoid scrapping of an adjacent water by performing a subsequent cleaning process for completely removing copper particles penetrating a wafer. Particles penetrating the back surface of a wafer are removed by a D-sonic scrub process. Particles on the front surface of the wafer are removed by a high-pressure scrub process. A nitride layer on the backside layer of the wafer is etched by using HCl. The nitride layer is etched again by using HF.