| 摘要 |
A post treatment method for an aluminium line of a semiconductor device is provided to prevent effectively the corrosion of the aluminium line due to chloric gas by removing completely the chloric gas using sequentially oxygen gas and oxygen plasma. A first oxygen gas is supplied into a chamber(S1). The inner pressure and temperature of the chamber are 2.5 Torr and 250 degrees, respectively. A second oxygen gas is supplied into the chamber under a predetermined RF(Radio Frequency) power condition(S2). The predetermined RF power is 2500 W. CF4 gas and H2O gas are supplied into the chamber under the same RF power condition(S3). A third oxygen gas is supplied into the chamber under the same RF power condition(S4).
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