发明名称 PHOTORESIST POLYMER, PHOTORESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
摘要 Provided are a photoresist polymer comprising fluorine element, a photoresist composition comprising the polymer, and a method for manufacturing a semiconductor device wherein uniform photoresist film is formed in space between patterns of etched layer by using the photoresist, and thus subsequent stable ion injection can be achieved. The photoresist polymer has a polymerization repeating unit represented by formula(1). In the formula(1), R1 is hydrogen or C1-C2 alkyl, R2 is C1-C10 perfluoroalkyl or C1-C10 alkyl partially substituted with F, and weight ratio of a:b:c:d is 6-10:6-10:6-10:1-4:1-4. The photoresist composition contains the photoresist polymer and organic solvent. The photoresist composition comprises 5-30 wt% of photoresist polymer. The photoresist composition further comprises a basic compound. The basic compound is triethanol amine. The photoresist composition comprises 0.02-3.0 wt% of the basic compound.
申请公布号 KR20060125330(A) 申请公布日期 2006.12.06
申请号 KR20050047325 申请日期 2005.06.02
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, JAE CHANG
分类号 G03F7/039 主分类号 G03F7/039
代理机构 代理人
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