| 摘要 |
A light emitting diode is provided to change a progression path of light by forming a nano pattern metal layer on the surface of a semiconductor layer located in a position where the light generated from an active layer is discharged to the outside. A p-type semiconductor layer(103) confronts an n-type semiconductor layer(105). An active layer(104) is formed between the n-type semiconductor layer and the p-type semiconductor layer. A nano pattern metal layer(110) is formed as a predetermined pattern on one surface of the n-type semiconductor layer or the p-type semiconductor layer through which the light generated from the active layer is discharged to the outside. The nano pattern metal layer changes the progression path of the light to increase light extraction efficiency, made of a stripe pattern, a lattice pattern or a dot pattern.
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