IMAGE SENSOR, AND METHOD FOR FABRICATING THE SAME

摘要

An image sensor and a method for fabricating the same are provided to secure a p-type impurity region having a uniform doping level by forming a second epitaxial layer with silicon doped in an in-situ state or a SiGe epitaxial layer. A trench is formed at a predetermined region of a first conductive type semiconductor substrate(301). A second conductive type impurity region(308) for photodiode is formed within the first conductive type semiconductor substrate corresponding to a bottom surface of the trench. A second conductive type epitaxial layer(311) for photodiode is buried into the trench. A second epitaxial layer(312) is formed on the second conductive type epitaxial layer. A first conductive type impurity is doped on the second epitaxial layer by an in-situ method.