INTEGRATED PASSIVE DEVICE CHIP AND PROCESS OF THE SAME

摘要

An integrated passive device chip is provided to improve price competitiveness by using an alumina substrate which has a relatively low price and excellent adaptability and substrate characteristic as compared with a silicon substrate and a gallium arsenic substrate. A substrate(10) is made of alumina ceramic, including a plurality of via holes(12) having a predetermined pattern. A conductive layer(30) is made of a conductive material deposited in each via hole formed in the substrate and on the upper and lower surfaces of each via hole. An integrated passive device chip includes a passive device(20) formed on one surface of the substrate, connected to the conductive layer. A thin film(40) is made of a dielectric that is deposited between the substrate and the passive device to improve adhesion and planarization.