| 摘要 |
A photoresist polymer for immersion lithography, and a photoresist composition comprising the same is provided to form a photoresist film capable of preventing a contamination of exposure lens and a strain of photoresist pattern formed by exposing. The photoresist polymer comprises a repeating unit represented by formula(1). In the formula(1), X3 is an alkylene of C1-C10, sulfur or oxygen, and A is a group generating an acid with light. The photoresist composition comprises the photoresist polymer and an organic solvent. A method for producing a semiconductor device by using the composition comprises the steps of (i) coating the photoresist composition on the top of layer to be etched so as to form a photoresist film, (ii) exposing the photoresist film, (iii) developing the exposed photoresist film to obtain a photoresist pattern, and (iv) etching the bottom of the layer to be etched by etching process using the photoresist pattern as etching mask so as to form a pattern of the layer.
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