| 摘要 |
A method for fabricating a semiconductor device is provided to avoid the deterioration of reliability when an etch process is not performed or the lateral surface of an IMD(intermetal dielectric) layer is damaged in a photoresist strip process by using a carbon-containing dielectric layer like SiLK as an IMD layer. A substrate is prepared which has a carbon-containing insulation layer. A photoresist pattern(17) is formed on the insulation layer to expose a part of the insulation layer. A first etch process using plasma including N2/O2, N2/H2 or NH3/O2 gas is performed at a temperature of 10~100 deg.C to etch the insulation layer. A strip process is performed at a temperature of 10~100 deg.C by an in-situ method with the first etch process to remove the photoresist pattern.
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