| 摘要 |
A plasma processing device is provided to reduce the resistance of a surface layer of a power supply member when an RF voltage is applied to the power supply member by forming a high conductive metal layer in the power supply member. A base member has an electrode to which an RF voltage is applied. A power supply member(11) supplies an RF voltage to the electrode. The power supply member includes a power supplying main part(13) and a high conductive metal layer(15) which is formed in the surface part of the power supply part and has higher conductivity than that of the power supplying main part. A diffusion preventing metal layer(17) prevents the high conductive metal layer from being diffused to the power supply member, formed between the power supplying main part and the high conductive metal layer.
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