发明名称 IMMERSION LITHOGRAPHY DEVICE
摘要 <p>An immersion lithography device is provided to prevent contamination of a wafer stage and contamination of upper/lower ends of a wafer by dipping a wafer stage into an immersion solution. A guide unit(16) guides exposure beams received from an exposure source. A lens(11) is installed at a lateral end of the guide unit. A reflecting member(15) is installed in the inside of the guide unit in order to reflect vertically the exposure beams to the lens. A wafer stage(14) is installed vertically to the ground so that an upper surface of the wafer stage faces the lens. A liquid supply unit(12) supplies an immersion solution between the wafer and the lens. The wafer stage includes vacuum holes in order to absorb and fix the wafer in a vacuum state.</p>
申请公布号 KR20060124905(A) 申请公布日期 2006.12.06
申请号 KR20050046583 申请日期 2005.06.01
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 PARK, KI YEOP
分类号 H01L21/027 主分类号 H01L21/027
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