METHOD OF MANUFACTURING FERROELECTRIC LAYER AND METHOD OF MANUFACTURING ELECTRONIC INSTRUMENT

摘要

A method for fabricating a ferroelectric layer is provided to crystallize a ferroelectric layer at a low temperature in forming a semiconductor device, a piezoelectric device and the like by using a ferroelectric layer having excellent orientation. An insulation layer is formed on a base material. A hole is formed in the insulation layer. An electrode layer(10) is formed in the hole. A first ferroelectric layer(22) is formed on the electrode layer by an MOCVD method. A second ferroelectric layer(24) is formed on the first ferroelectric layer by a liquid method.