| 摘要 |
An thin film transistor, a manufacturing method thereof and an LCD(Liquid Crystal Display) device are provided to inhibit the increase of the resistance value at a gate electrode. An LCD panel(1) has an array substrate(2) with a rectangular flat panel shape including a glass substrate. A screen member is formed at the center of the glass substrate as an image display area. Plural pixels(5) with a matrix shape are arranged at the screen member. A pixel electrode, a subsidiary capacitor and a TFT(Thin Film Transistor)(8) are arranged at the pixel. An undercoat layer(17) is constructed as an insulating layer is stacked on the entire surface of the glass substrate. An active layer(21) is formed on the undercoat layer and includes a channel region(22) formed at the center thereof. Source and drain regions(23,24) are formed at both sides of the active layer. A gate insulation layer(26) is stacked on the undercoat layer. |
