发明名称 Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability
摘要 An optical modulator (100) comprises a first waveguide layer (104) and a barrier layer (108), and a quantum well layer (106) sandwiched between the first waveguide layer (104) and the barrier layer (108), where the quantum well layer (106) has a graded composition that varies the bandgap energy of the quantum well layer (106) between a minimum bandgap energy and the bandgap energy of at least one of the first waveguide layer(104) and the barrier layer (108).
申请公布号 EP1729167(A1) 申请公布日期 2006.12.06
申请号 EP20060010549 申请日期 2006.05.22
申请人 AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD 发明人 BOUR, DAVID;ZHU, JINTIAN
分类号 G02F1/017 主分类号 G02F1/017
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