| 摘要 |
A switching element for characteristic test and a characteristic test method are provided to effectively and accurately test the properties of a TFT by preventing the switch element from being damaged by ESD(ElectroStatic Discharge). A TFT(Thin Film Transistor,10) is arranged on a substrate for an LCD(Liquid Crystal Display). A source terminal(11), a gate terminal(12), and a drain terminal(13) are coupled with a source, a gate, and a drain of the TFT, respectively. The source, gate, and drain terminals are coupled with a common potential terminal(20) in common, through a common potential line(50). The common potential terminal equalizes the potentials of the source, gate, and drain terminals. The common potential terminal is formed on the LCD substrate adjacently to electrode terminals. The common potential terminal is arranged, so that the distance between the gate and common potential terminals lies between 5 and 1000 m.
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